Modelling radiation damage to pixel sensors in the ATLAS detector
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AbstractSilicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
All Author(s) ListATLAS Collaboration
Journal nameJournal of Instrumentation
Year2019
Month6
Volume Number14
PublisherIOP PUBLISHING LTD
Article numberP06012
ISSN1748-0221
LanguagesEnglish-United Kingdom
KeywordsDetector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors
Web of Science Subject CategoriesInstruments & Instrumentation;Instruments & Instrumentation

Last updated on 2021-06-05 at 01:55