Modelling radiation damage to pixel sensors in the ATLAS detector
Publication in refereed journal

替代計量分析
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其它資訊
摘要Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
著者ATLAS Collaboration
期刊名稱Journal of Instrumentation
出版年份2019
月份6
卷號14
出版社IOP PUBLISHING LTD
文章號碼P06012
國際標準期刊號1748-0221
語言英式英語
關鍵詞Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors
Web of Science 學科類別Instruments & Instrumentation;Instruments & Instrumentation

上次更新時間 2021-14-05 於 01:21