A Full-Load Hybrid Compensated LDO with Output Capacitance Range of 0 to 1 mu F
Refereed conference paper presented and published in conference proceedings


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AbstractA full-load low-dropout regulator (LDO) based on proposed hybrid compensation structure is proposed. The proposed LDO makes use of an NMOSFET power transistor. The LDO is able to be stabilized for 0 to 1-mu F capacitive load. Experimental results prove the LDO stability and fast recovery speed.
Acceptance Date18/10/2017
All Author(s) ListWoo YH, Mak KH, Leung KN
Name of ConferenceInternational Conference on Electron Devices and Solid-State Circuits (EDSSC)
Start Date of Conference18/10/2017
End Date of Conference20/10/2017
Place of ConferenceHsinchu
Country/Region of ConferenceTaiwan
Proceedings Title2017 International Conference On Electron Devices And Solid-State Circuits (EDSSC)
Series TitleIEEE International Conference on Electron Devices and Solid-State Circuits
Title of Publication2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
Year2017
ISBN978-1-5386-2907-9
LanguagesEnglish-United Kingdom
KeywordsLDO,load transient response,output capacitance

Last updated on 2020-26-09 at 02:19