Epitaxial Stitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenides (TMDCs) Heterojunctions
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摘要In recent years, ultrathin two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as MX2 (M = Mo, W; X = S, Se, etc.) have become the flagship materials after graphene. 2D-MX2 have attracted significant attention due to their novel properties arising from their strict dimensional confinement as well as strong spin–orbit coupling effects, which provides an ideal platform for exploring new fundamental research and realizing technological innovation. The 2D nature and the small lattice mismatch between MX2 make them ideal templates for construction of vertical and lateral heterojunctions at atomic scale by means of CVD epitaxial growth. This feature article aims to introduce current advances in the preparation of vertical or lateral epitaxial heterostructures based on 2D MX2 nanosheets as well as their potential applications in electronics, and optoelectronics. Firstly, various epitaxial CVD strategies for synthesis of vertical or lateral 2D MX2 heterostructures are comprehensively reviewed. Meanwhile, the advantages of these epitaxial methods as well as several applications of 2D MX2 heterostructures, such as photodiodes and photovoltaic devices are highlighted. Then the remaining challenges facing the controllable syntheses and the future perspectives of this promising area are discussed.
著者Kun Chen, Xi Wan, Jianbin Xu
會議名稱2nd International Conference on Two-Dimensional Layered Materials
會議開始日07.01.2016
會議完結日09.01.2016
會議地點Hong Kong
會議國家/地區中國
期刊名稱Advanced Functional Materials
出版年份2017
月份5
日期18
卷號27
期次19
頁次1603884
國際標準期刊號1616-301X
電子國際標準期刊號1616-3028
語言美式英語

上次更新時間 2020-04-12 於 00:18