Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
Publication in refereed journal

香港中文大學研究人員

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摘要The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus-based long-wavelength IR photodetectors, with room temperature operation up to 8.2 mu m, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature-specific detectivity higher than 4.9 x 10(9) Jones was obtained in the 3- to 5-mu m range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices.
出版社接受日期08.05.2017
著者Mingsheng Long, Anyuan Gao, Peng Wang, Hui Xia, Claudia Ott, Chen Pan, Yajun Fu, Erfu Liu, Xiaoshuang Chen, Wei Lu, Tom Nilges, Jianbin Xu, Xiaomu Wang, Weida Hu, Feng Miao
期刊名稱Science Advances
出版年份2017
月份6
日期30
卷號3
期次6
出版社American Association for the Advancement of Science: Science Advances / AAAS
頁次e1700589
國際標準期刊號2375-2548
語言美式英語

上次更新時間 2020-23-11 於 01:35