Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver
Publication in refereed journal


Times Cited
Web of Science31WOS source URL (as at 16/01/2021) Click here for the latest count
Altmetrics Information
.

Other information
AbstractHydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.
All Author(s) ListChen CY, Wong CP
Journal nameNanoscale
Year2015
Volume Number7
Issue Number3
PublisherROYAL SOC CHEMISTRY
Pages1216 - 1223
ISSN2040-3364
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesChemistry; Chemistry, Multidisciplinary; Materials Science; Materials Science, Multidisciplinary; Nanoscience & Nanotechnology; Physics; Physics, Applied; Science & Technology - Other Topics

Last updated on 2021-17-01 at 01:51