Ferromagnetism in transition metal-implanted titanium dioxide films
Refereed conference paper presented and published in conference proceedings

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AbstractIn this work, TiO2 thin films were prepared by RF sputtering onto thermally grown oxide layers on Si substrates. Cobalt and iron implantation into the TiO2 films was performed using a metal vapor vacuum arc ion source. The as-implanted and annealed films were characterized using Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffractometry, x-ray photoelectron spectroscopy, spectroscopic ellipsometry, and vibrating sample magnetometry. The dependence of the magnetic properties on the implantation and annealing conditions were studied in detail. Clear room temperature ferromagnetic properties (RT FM) were observed. The saturation magnetization (Ms) values per implanted Co or Fe atom exhibit an oscillatory dependence on the implantation dose. The maximum Ms in one Co implanted samples was determined to be 2.3 μB/Co, exceeding the bulk Co value. The possible origins of the RT FM properties are discussed.
All Author(s) ListWong S.P., Gao Y., Cheng K.H., Chow C.F., Ke N., Cheung W.Y., Li Q., Shao G.
Name of ConferenceDevice and Process Technologies for MEMS, Microelectronics, and Photonics III
Start Date of Conference10/12/2003
End Date of Conference12/12/2003
Place of ConferencePerth, WA
Country/Region of ConferenceUnited States of America
Volume Number5276
Pages19 - 25
LanguagesEnglish-United Kingdom
KeywordsCo-doped titanium dioxide, Ion implantation, Room-temperature ferromagnetism

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