Ferromagnetism in transition metal-implanted titanium dioxide films
Refereed conference paper presented and published in conference proceedings

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其它資訊
摘要In this work, TiO2 thin films were prepared by RF sputtering onto thermally grown oxide layers on Si substrates. Cobalt and iron implantation into the TiO2 films was performed using a metal vapor vacuum arc ion source. The as-implanted and annealed films were characterized using Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffractometry, x-ray photoelectron spectroscopy, spectroscopic ellipsometry, and vibrating sample magnetometry. The dependence of the magnetic properties on the implantation and annealing conditions were studied in detail. Clear room temperature ferromagnetic properties (RT FM) were observed. The saturation magnetization (Ms) values per implanted Co or Fe atom exhibit an oscillatory dependence on the implantation dose. The maximum Ms in one Co implanted samples was determined to be 2.3 μB/Co, exceeding the bulk Co value. The possible origins of the RT FM properties are discussed.
著者Wong S.P., Gao Y., Cheng K.H., Chow C.F., Ke N., Cheung W.Y., Li Q., Shao G.
會議名稱Device and Process Technologies for MEMS, Microelectronics, and Photonics III
會議開始日10.12.2003
會議完結日12.12.2003
會議地點Perth, WA
會議國家/地區美國
出版年份2004
月份6
日期1
卷號5276
頁次19 - 25
國際標準書號0-8194-5169-X
國際標準期刊號0277-786X
語言英式英語
關鍵詞Co-doped titanium dioxide, Ion implantation, Room-temperature ferromagnetism

上次更新時間 2021-03-12 於 00:12