Detection of sub-terahertz radiation using proton implanted GaAs
Refereed conference paper presented and published in conference proceedings

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AbstractThe use of proton damaged GaAs for millimeter wave detection by photoconductive sampling is investigated by comparing the relative performance of proton implanted (PI) GaAs and low-temperature grown (LT) GaAs. The PI GaAs detector produces a 7 dB better signal to noise ratio than the LT-GaAs detector. The short carrier lifetime makes PI GaAs an attractive material for terahertz applications.
All Author(s) ListWong C.S., Tsang H.K.
Name of ConferenceProceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99)
Start Date of Conference08/11/1999
End Date of Conference11/11/1999
Place of ConferenceSan Francisco, CA, USA
Country/Region of ConferenceUnited States of America
Volume Number2
Pages570 - 571
LanguagesEnglish-United Kingdom

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