Carrier depletion based linear silicon modulator
Refereed conference paper presented and published in conference proceedings

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AbstractWe show that the linearity of a silicon electro-optic modulator can be improved by optimizing the embedded diode structure. Optimized designs of silicon modulators can give 5.9 dB improvement in SFDR over conventional LiNbO3 modulators. © 2011 OSA.
All Author(s) ListLo S.M.G., Li C., Tsang H.K.
Name of Conference2011 Conference on Lasers and Electro-Optics, CLEO 2011
Start Date of Conference01/05/2011
End Date of Conference06/05/2011
Place of ConferenceBaltimore, MD
Country/Region of ConferenceUnited States of America
Detailed descriptionorganized by IEEE, OSA,
LanguagesEnglish-United Kingdom

Last updated on 2020-13-08 at 01:20