Aqueous solution-deposited gallium oxide dielectric for low-temperature, low-operating-voltage indium oxide thin-film transistors: A facile route to green oxide electronics
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AbstractWe reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V-1 s-1, on/off current ratio of ∼105, low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.
All Author(s) ListXu W., Cao H., Liang L., Xu J.-B.
Journal nameACS Applied Materials and Interfaces
Volume Number7
Issue Number27
PublisherAmerican Chemical Society
Place of PublicationUnited States
Pages14720 - 14725
LanguagesEnglish-United Kingdom
Keywordsaqueous route, gallium oxide dielectric, green oxide electronics, indium oxide, low-temperature, oxide thin-film transistors

Last updated on 2020-19-11 at 01:42