Design considerations of STCB OTA in CMOS 65nm with large capacitive loads
Refereed conference paper presented and published in conference proceedings

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AbstractA modified structure of OTA in CMOS 65-nm with signal- and transient-current boosting is presented in this paper. The structure uses simple cascode current mirrors to overcome channel-modulation effect of the 65-nm MOSFETs and to maintain low-error current matching. Simulations show that the parasitic poles of the OTA in CMOS 65-nm are located at very high frequencies and the achievable bandwidth is much increased with sufficient phase margin to maintain closed-loop stability.
All Author(s) ListMak K.H., Ho M., Leung K.N., Goh W.L.
Name of ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 2015
Start Date of Conference24/05/2015
End Date of Conference27/05/2015
Place of ConferenceLisbon
Country/Region of ConferencePortugal
Volume Number2015-July
Pages2465 - 2468
LanguagesEnglish-United Kingdom
KeywordsAmplifier, frequency compensation

Last updated on 2021-10-09 at 23:53