A resistor-based sub-1-V CMOS smart temperature sensor for VLSI thermal management
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AbstractThis paper presents a novel low-voltage CMOS smart temperature sensor targeted for VLSI thermal management. A polyresistor is used as the sensing element and digitization is performed in the time domain. The proposed temperature-sensing concept can be realized with simple circuits that operate at low supply voltages, which are compatible with the digital circuits in VLSI systems. Fabricated in 90-nm CMOS, the sensor can operate with a supply voltage as low as 0.8 V and features a supply sensitivity of 4 �XC/V. After 50-sample moving-average and a two-point calibration at 25 �XC and 45 �XC, the design achieves an inaccuracy of -0.6 �XC/0.8 �XC over -40 �XC-125 �XC. It dissipates only 11.8 �g W at a sampling rate of 5 kS/s from a 0.9-V nominal supply.
All Author(s) ListTang X., Ng W.T., Pun K.-P.
Journal nameIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume Number23
Issue Number9
PublisherInstitute of Electrical and Electronics Engineers
Place of PublicationUnited States
Pages1651 - 1660
LanguagesEnglish-United Kingdom
KeywordsCalibration, low-voltage, resistor based, smart temperature sensor, time domain

Last updated on 2020-20-11 at 02:24