Structural and optical properties of SiC films deposited on Si by DG magnetron sputtering
Refereed conference paper presented and published in conference proceedings

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AbstractSilicon carbide films were deposited on Si by reactively sputtering of a silicon target in the CH(4) atmosphere of a BC sputtering system. Structural investigation of the stoichiometric SIC films showed that they were composed of microctystalline and amorphous SiC. The optical behavior of the SiC film was studied by IR reflectance in the range of 400cm(-1) to 4000cm(-1). The experimental IR reflectance in this range was fitted by calculating the complex dielectric function of the films based on effective medium theory (EMT), in which the SiC films were assumed to consist of homogeneously distributed SiC (amorphous and crystalline). The experimental spectra can be best fitted by adjusting the structural parameters and the volume fraction of crystalline phases. The results show that IRRS is a suitable method fur detection of the quality of SiC films deposited on Si.
All Author(s) ListLei YM, Yu YH, Cheng LL, Lin L, Sundaraval B, Luo EZ, Lin S, Ren CX, Cheung WY, Wong SP, Xu JB, Zou SC, Wilson IH
Name of Conference3rd European Conference on Silicon Carbide and Related Materials
Start Date of Conference03/09/2000
End Date of Conference07/09/2000
Place of ConferenceKloster Banz
Country/Region of ConferenceGermany
Journal nameMaterials Science Forum
Proceedings TitleECSCM 2000 Silicon Carbide and Related Materials: Proceedings of the 3rd European Conference on Silicon Carbide and Related Materials
Volume Number353-356
Pages191 - 194
LanguagesEnglish-United Kingdom
KeywordsAES,EMT,GA-XRD,IR reflectance,reactive DC sputtering
Web of Science Subject CategoriesMaterials Science, Multidisciplinary;Materials Science, Characterization & Testing;Materials Science

Last updated on 2021-05-05 at 01:44