Preparation and characterization of ferroelectric YMnO3 thin film
Refereed conference paper presented and published in conference proceedings


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AbstractPreferential (0004) oriented ferroelectric YMnO3 thin films were prepared on Si substrates using inorganic precursors by sol-gel method. x-ray diffraction (XRD) measurement was used to find out suitable processing temperature. A 0.4 volt C-V window was obtained for the MFS structure at room temperature. And a wider C-V window of 0.8 volt was obtained at 200K. Also Rutherford Backscattering Spectrometry(RBS) and AFM were used to characterize the films.
All Author(s) ListGuo HY, Wilson IH, Xu JB, Cheung WY, Ke N, Sundaral B, Luo EZ, Lin J, Yu J
Name of ConferenceThe 12th IEEE International Symposium on Applications of Ferroelectrics
Start Date of Conference21/07/2000
End Date of Conference02/08/2000
Place of ConferenceHonolulu
Country/Region of ConferenceUnited States of America
Proceedings TitleProceedings of the 12th IEEE International Symposium on Applications of Ferroelectrics
Title of PublicationPROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II
Year2001
PublisherIEEE
Pages657 - 659
ISBN0-7803-5941-0
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesEngineering, Electrical & Electronic;Materials Science, Multidisciplinary;Engineering;Materials Science

Last updated on 2021-05-05 at 01:44