Preparation and characterization of ferroelectric YMnO3 thin film
Refereed conference paper presented and published in conference proceedings

香港中文大學研究人員

全文

引用次數

其它資訊
摘要Preferential (0004) oriented ferroelectric YMnO3 thin films were prepared on Si substrates using inorganic precursors by sol-gel method. x-ray diffraction (XRD) measurement was used to find out suitable processing temperature. A 0.4 volt C-V window was obtained for the MFS structure at room temperature. And a wider C-V window of 0.8 volt was obtained at 200K. Also Rutherford Backscattering Spectrometry(RBS) and AFM were used to characterize the films.
著者Guo HY, Wilson IH, Xu JB, Cheung WY, Ke N, Sundaral B, Luo EZ, Lin J, Yu J
會議名稱The 12th IEEE International Symposium on Applications of Ferroelectrics
會議開始日21.07.2000
會議完結日02.08.2000
會議地點Honolulu
會議國家/地區美國
會議論文集題名Proceedings of the 12th IEEE International Symposium on Applications of Ferroelectrics
出版作品名稱PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II
出版年份2001
出版社IEEE
頁次657 - 659
國際標準書號0-7803-5941-0
語言英式英語
Web of Science 學科類別Engineering, Electrical & Electronic;Materials Science, Multidisciplinary;Engineering;Materials Science

上次更新時間 2021-05-05 於 01:44