Annealing effects on ultrathin MOS capacitors
Refereed conference paper presented and published in conference proceedings

香港中文大學研究人員

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摘要Silicon oxide with thickness less than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oxide. High frequency capacitance-voltage (HFC-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics are.-measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 450 degreesC annealing for 30 minutes has the lowest density of the interface states.
著者Ng ACH, Xu J, Xu JB, Cheung WY
會議名稱IEEE Hong Kong Electron Devices Meeting
會議開始日30.06.2001
會議完結日30.06.2001
會議地點Hong Kong
會議國家/地區香港
會議論文集題名Proceedings of IEEE Hong Kong Electron Devices Meeting
出版作品名稱PROCEEDINGS 2001 IEEE HONG KONG ELECTRON DEVICES MEETING
出版年份2001
出版社IEEE
頁次101 - 105
國際標準書號0-7803-6714-6
語言英式英語
關鍵詞silicon dioxide,MOS,annealing effects,CV,interface state density
Web of Science 學科類別Engineering, Electrical & Electronic;Optics;Physics, Applied;Engineering;Optics;Physics

上次更新時間 2021-13-05 於 02:56