Annealing effects on ultrathin MOS capacitors
Refereed conference paper presented and published in conference proceedings


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AbstractSilicon oxide with thickness less than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oxide. High frequency capacitance-voltage (HFC-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics are.-measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 450 degreesC annealing for 30 minutes has the lowest density of the interface states.
All Author(s) ListNg ACH, Xu J, Xu JB, Cheung WY
Name of ConferenceIEEE Hong Kong Electron Devices Meeting
Start Date of Conference30/06/2001
End Date of Conference30/06/2001
Place of ConferenceHong Kong
Country/Region of ConferenceHong Kong
Proceedings TitleProceedings of IEEE Hong Kong Electron Devices Meeting
Title of PublicationPROCEEDINGS 2001 IEEE HONG KONG ELECTRON DEVICES MEETING
Year2001
PublisherIEEE
Pages101 - 105
ISBN0-7803-6714-6
LanguagesEnglish-United Kingdom
Keywordssilicon dioxide,MOS,annealing effects,CV,interface state density
Web of Science Subject CategoriesEngineering, Electrical & Electronic;Optics;Physics, Applied;Engineering;Optics;Physics

Last updated on 2021-13-05 at 02:56