Direct observation of ordered structures during oxidation of Si(III)
Refereed conference paper presented and published in conference proceedings

香港中文大學研究人員

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替代計量分析
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其它資訊
摘要Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology that why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.
著者He JZ, Xu JB, Xu MS, Xu J, Ng CH, He JZ
會議名稱IEEE Hong Kong Electron Devices Meeting
會議開始日24.06.2000
會議完結日24.06.2000
會議地點Hong Kong
會議國家/地區香港
會議論文集題名Proceedings of IEEE Hong Kong Electron Devices Meeting
出版作品名稱2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS
出版年份2000
出版社IEEE
頁次30 - 33
國際標準書號0-7803-6304-3
語言英式英語
Web of Science 學科類別Engineering, Electrical & Electronic;Materials Science, Characterization & Testing;Engineering;Materials Science

上次更新時間 2021-05-05 於 01:44