Direct observation of ordered structures during oxidation of Si(III)
Refereed conference paper presented and published in conference proceedings


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AbstractVariable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology that why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.
All Author(s) ListHe JZ, Xu JB, Xu MS, Xu J, Ng CH, He JZ
Name of ConferenceIEEE Hong Kong Electron Devices Meeting
Start Date of Conference24/06/2000
End Date of Conference24/06/2000
Place of ConferenceHong Kong
Country/Region of ConferenceHong Kong
Proceedings TitleProceedings of IEEE Hong Kong Electron Devices Meeting
Title of Publication2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS
Year2000
PublisherIEEE
Pages30 - 33
ISBN0-7803-6304-3
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesEngineering, Electrical & Electronic;Materials Science, Characterization & Testing;Engineering;Materials Science

Last updated on 2021-17-06 at 00:27