Probing conducting particles buried in a Ni-x(SiO2)(1-x) composite by conducting atomic force microscopy
Refereed conference paper presented and published in conference proceedings


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AbstractIn this article, we present an experimental study on probing conducting particles buried in a Ni-x(SiO2)(1-x) composite with x around the percolation threshold x(c) by conducting atomic force microscopy (C-AFM). The buried conducting particles were "observed" via the electric current image of C-AFM at constant bias. The current from buried conducting particles originates from held assisted tunneling through the insulating layer. Examples of measuring the thickness of the insulating layer will be given. The analysis shows that it is possible to probe the buried metal particles as deep as several nanometers underneath the surface. By correlating the surface topographic and the current image, the profile of the metal-insulator interface can be measured. General issues on spatial resolution will also be discussed in this article. (C) 1998 American Vacuum Society.
All Author(s) ListLuo EZ, Wilson IH, Xu JB, Ma JX, Yan X
Name of ConferenceThe 44th National Symposium of the American Vacuum Society, 1997
Start Date of Conference20/10/1997
End Date of Conference24/10/1997
Place of ConferenceSan Jose
Country/Region of ConferenceUnited States of America
Journal nameJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Proceedings TitleJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Year1998
Month7
Volume Number16
Issue Number4
PublisherAMER INST PHYSICS
Place of PublicationUSA
Pages1953 - 1957
ISSN1071-1023
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesEngineering, Electrical & Electronic;Nanoscience & Nanotechnology;Physics, Applied;Engineering;Science & Technology - Other Topics;Physics;ENGINEERING, ELECTRICAL & ELECTRONIC;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED

Last updated on 2021-05-05 at 01:44