Probing conducting particles buried in a Ni-x(SiO2)(1-x) composite by conducting atomic force microscopy
Refereed conference paper presented and published in conference proceedings

香港中文大學研究人員

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摘要In this article, we present an experimental study on probing conducting particles buried in a Ni-x(SiO2)(1-x) composite with x around the percolation threshold x(c) by conducting atomic force microscopy (C-AFM). The buried conducting particles were "observed" via the electric current image of C-AFM at constant bias. The current from buried conducting particles originates from held assisted tunneling through the insulating layer. Examples of measuring the thickness of the insulating layer will be given. The analysis shows that it is possible to probe the buried metal particles as deep as several nanometers underneath the surface. By correlating the surface topographic and the current image, the profile of the metal-insulator interface can be measured. General issues on spatial resolution will also be discussed in this article. (C) 1998 American Vacuum Society.
著者Luo EZ, Wilson IH, Xu JB, Ma JX, Yan X
會議名稱The 44th National Symposium of the American Vacuum Society, 1997
會議開始日20.10.1997
會議完結日24.10.1997
會議地點San Jose
會議國家/地區美國
期刊名稱Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
會議論文集題名JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
出版年份1998
月份7
卷號16
期次4
出版社AMER INST PHYSICS
出版地USA
頁次1953 - 1957
國際標準期刊號1071-1023
語言英式英語
Web of Science 學科類別Engineering, Electrical & Electronic;Nanoscience & Nanotechnology;Physics, Applied;Engineering;Science & Technology - Other Topics;Physics;ENGINEERING, ELECTRICAL & ELECTRONIC;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED

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