Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors
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AbstractSolution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm2 V−1 s−1 at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.
All Author(s) ListXU Xiaomin, YAO Yifan, SHAN Bowen, GU Xiao, LIU Danqing, LIU Jinyu, XU Jianbin, ZHAO Ni, HU Wenping, MIAO Qian
Journal nameAdvanced Materials
Volume Number28
Issue Number26
Pages5276 - 5283
LanguagesEnglish-United Kingdom

Last updated on 2021-16-09 at 00:49