Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
Publication in refereed journal


Times Cited
Altmetrics Information
.

Other information
AbstractFormation of heterojunctions of transition metal dichalcogenides (TMDs) stimulates wide interest in new device physics and technology by tuning optical and electronic properties of TMDs. TMDs heterojunctions are of scientific and technological interest for exploration of next generation flexible electronics. Herein, we report on a two-step epitaxial ambient-pressure CVD technique to construct in-plane MoS2–WS2 heterostructures. The technique has the potential to artificially control the shape and structure of heterostructures or even to be more potentially extendable to growth of TMD superlattice than that of one-step CVD technique. Moreover, the unique MX2 heterostructure with monolayer MoS2 core wrapped by multilayer WS2 is obtained by the technique, which is entirely different from MX2 heterostructures synthesized by existing one-step CVD technique. Transmission electron microscopy, Raman and photoluminescence mapping studies reveal that the obtained heterostructure nanosheets clearly exhibit the modulated structural and optical properties. Electrical transport studies demonstrate that the special MoS2 (monolayer)/WS2 (multilayer) heterojunctions serve as intrinsic lateral p–n diodes and unambiguously show the photovoltaic effect. On the basis of this special heterostructure, depletion-layer width and built-in potential, as well as the built-in electric field distribution, are obtained by KPFM measurement, which are the essential parameters for TMD optoelectronic devices. With further development in future studies, this growth approach is envisaged to bring about a new growth platform for two-dimensional atomic crystals and to create unprecedented architectures therefor.
All Author(s) ListCHEN Kun, WAN Xi, WEN Jinxiu, XIE Weiguang, KANG Zhiwen, ZENG Xiaoliang, CHEN Huanjun, XU Jianbin
Journal nameACS Nano
Year2015
Month10
Volume Number9
Issue Number10
PublisherAmerican Chemical Society
Pages9868 - 9876
ISSN1936-0851
eISSN1936-086X
LanguagesEnglish-United Kingdom
Keywordstwo-step epitaxial CVD method, MoS2-WS2 heterostructure, KPFM, depletion-layer width, built-in potential, built-in electric field

Last updated on 2021-24-09 at 23:42