General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion
Publication in refereed journal


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摘要Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40-50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices.
著者Wu XJ, Xu HH, Wang Y, Rogach AL, Shen YZ, Zhao N
期刊名稱Semiconductor Science and Technology
出版年份2015
月份7
日期1
卷號30
期次7
出版社IOP PUBLISHING LTD
國際標準期刊號0268-1242
語言英式英語
關鍵詞indium diffusion; memory; metal/insulator/ITO
Web of Science 學科類別Engineering; Engineering, Electrical & Electronic; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Condensed Matter

上次更新時間 2021-11-01 於 01:36