Triple Patterning Aware Detailed Placement Toward Zero Cross-Row Middle-of-Line Conflict
Refereed conference paper presented and published in conference proceedings

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AbstractTriple patterning lithography (TPL) is one of the most promising lithography technology in sub-14nm technology nodes, especially for complicated low metal layer manufacturing. To overcome the intra-cell routability problem and improve the cell regularity, recently middle-of-line (MOL) layers are employed in standard cell design. However, MOL layers may introduce a large amount of cross-row TPL conflicts for row based design. Motivated by this challenge, in this paper we propose the first TPL aware detailed placement toward zero cross-row MOL conflict. In standard cell pre-coloring, boolean based look-up table is proposed to reduce solution space. In detailed placement stage, two powerful techniques, i.e., local reordered single row refinement (LRSR) and min-cost flow based conflict removal, are proposed to provide zero TPL conflict solution. The experimental results demonstrate the effectiveness of our proposed methodologies.
All Author(s) ListLin YB, Yu B, Xu BY, Pan DZ
Name of Conference34th IEEE/ACM International Conference on Computer-Aided Design (ICCAD)
Start Date of Conference02/11/2015
End Date of Conference06/11/2015
Place of ConferenceAustin
Country/Region of ConferenceUnited States of America
Detailed descriptionorganized by IEEE/ACM,
Pages396 - 403
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesComputer Science; Computer Science, Theory & Methods; Engineering; Engineering, Electrical & Electronic

Last updated on 2020-05-08 at 05:53