Electrical and defect properties of Sn-doped C-60 thin films
Publication in refereed journal

香港中文大學研究人員

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其它資訊
摘要Tin-doped C-60 thin films have been prepared by co-evaporation. Through controlling the temperature of the boat containing Sn, C-60 thin films with different Sn content have been obtained. The electrical and defect properties of these Sn-doped C-60 films have been studied using resistivity, Hall effect and electron spin resonance (ESR) measurements. Besides the ESR signal of g=2.0024 normally observed for all the undoped C-60 materials, a new signal was observed for all the doped C-60 films. The g factor and peak-to-peak linewidth of the new signal are 7.0003 and 1.12 G, respectively. The spin density of the new signal increases with increasing Sn content. The temperature dependence of the electrical resistivity of these Sn-doped C-60 films shows semiconducting behaviour in the temperature range from 20 to 420 K. The room temperature conductivity increases with increasing Sn content and the activation energy at room temperature decreases with increasing Sn content. Hall effect measurements indicated that the conduction type in these Sn-doped C-60 thin films is n-type. Fourier transform infrared absorption measurements verified that Sn atoms have indeed been incorporated into these Sn-doped C-60 films. (C) 1997 Elsevier Science Ltd.
著者Ke N, Cheung WY, Wong SP, Peng SQ
會議名稱2nd International Interdisciplinary Colloquium on the Science and Technology of the Fullerenes
會議開始日07.07.1996
會議完結日10.07.1996
會議地點OXFORD
期刊名稱Carbon
出版年份1997
月份1
日期1
卷號35
期次6
出版社PERGAMON-ELSEVIER SCIENCE LTD
頁次759 - 762
國際標準期刊號0008-6223
電子國際標準期刊號1873-3891
語言英式英語
關鍵詞defects; electrical properties; electron spin resonance; fullerene
Web of Science 學科類別Chemistry; Chemistry, Physical; CHEMISTRY, PHYSICAL; Materials Science; Materials Science, Multidisciplinary; MATERIALS SCIENCE, MULTIDISCIPLINARY

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