Further evidence for the quantum confined electrochemistry model of the formation mechanism of p(-)-type porous silicon
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AbstractTwo types of p(-) porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. (C) 1996 American Institute of Physics.
All Author(s) ListJia L, Zang SL, Wong SP, Wilson IH, Hark SK, Liu ZF, Cai SM
Journal nameApplied Physics Letters
Year1996
Month11
Day25
Volume Number69
Issue Number22
PublisherAMER INST PHYSICS
Pages3399 - 3401
ISSN0003-6951
eISSN1077-3118
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesPhysics; Physics, Applied; PHYSICS, APPLIED

Last updated on 2020-01-06 at 02:33