Electrical characteristics of fluorine implanted a-Si:H thin films at high fields
Publication in refereed journal

香港中文大學研究人員

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摘要The electrical characteristics of fluorine implanted a-Si:H thin films at high fields have been studied. Multiple fluorine implantation into a-si:H thin films has been used to achieve a relatively flat fluorine profile, and the implanted fluorine concentrations range from 2X10(17) to 6X10(21) cm(-3). The dark electrical conductivities of these samples were measured in vacuum under various field strengths at temperatures from 50 to 400 K. It was found that all the samples show nonlinear transport behaviour at high fields (E greater than or equal to 10(3) V cm(-1)). In particular, the conductivity of most of the samples at temperatures that are not too low shows an electric field dependence of the form sigma=exp[A+(E/E(H))(gamma)]. However, for the sample with the highest fluorine concentration (6x10(21) cm(-3)) up to 300 K and for samples of lower fluorine concentration at sufficiently low temperatures, the field dependence changes to the form of a power law, as sigma proportional to E(gamma) at E greater than or equal to 10(5) V cm(-1). These high field nonlinear transport results are discussed in terms of a hopping model and field-induced tunnelling between the band tail states.
著者Ke N, Wong SP, Peng SQ, Lin SH
期刊名稱Materials Chemistry and Physics
出版年份1996
月份10
日期1
卷號46
期次1
出版社ELSEVIER SCIENCE SA LAUSANNE
頁次93 - 95
國際標準期刊號0254-0584
語言英式英語
關鍵詞amorphous silicon; electrical characteristics; fluorine implantation
Web of Science 學科類別Materials Science; Materials Science, Multidisciplinary; MATERIALS SCIENCE, MULTIDISCIPLINARY

上次更新時間 2021-15-01 於 00:39