XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices
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AbstractNanocrystalline surface layers of WC and SiC are formed by a sequential high-dose metal vapour vacuum arc implantation of carbon and tungsten ions into Si(I 0 0) and subsequent rapid thermal annealing. These layer systems are shown to provide electron field emitter structures with turn-on-fields as low as 15-20 V/mum. The formation of carbide and silicide phases as well as that of cavities at the SiC/Si-substrate interface upon annealing are discussed on the basis of X-ray diffraction, X-ray photo electron spectroscopy, cross-section transmission electron microscopy and HREM measurements. (C) 2002 Elsevier Science B.V. All rights reserved.
All Author(s) ListLindner JKN, Tsang WM, Wong SP, Xu JB, Wilson IH
Name of Conference4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference
Start Date of Conference18/06/2002
End Date of Conference21/06/2002
Place of ConferenceSTRASBOURG
Journal nameThin Solid Films
Year2003
Month3
Day3
Volume Number427
Issue Number1-2
PublisherELSEVIER SCIENCE SA
Pages417 - 421
ISSN0040-6090
LanguagesEnglish-United Kingdom
Keywordscavities; field emission devices; ion beam synthesis; rapid thermal annealing; Si; SiC; WC; WSi2
Web of Science Subject CategoriesMaterials Science; Materials Science, Coatings & Films; MATERIALS SCIENCE, COATINGS & FILMS; Materials Science, Multidisciplinary; MATERIALS SCIENCE, MULTIDISCIPLINARY; Physics; Physics, Applied; PHYSICS, APPLIED; Physics, Condensed Matter; PHYSICS, CONDENSED MATTER

Last updated on 2021-01-03 at 01:41