XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices
Publication in refereed journal


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摘要Nanocrystalline surface layers of WC and SiC are formed by a sequential high-dose metal vapour vacuum arc implantation of carbon and tungsten ions into Si(I 0 0) and subsequent rapid thermal annealing. These layer systems are shown to provide electron field emitter structures with turn-on-fields as low as 15-20 V/mum. The formation of carbide and silicide phases as well as that of cavities at the SiC/Si-substrate interface upon annealing are discussed on the basis of X-ray diffraction, X-ray photo electron spectroscopy, cross-section transmission electron microscopy and HREM measurements. (C) 2002 Elsevier Science B.V. All rights reserved.
著者Lindner JKN, Tsang WM, Wong SP, Xu JB, Wilson IH
會議名稱4th Symposium on Thin Films for Large Area Electronics held at the EMRS 2002 Spring Conference
會議開始日18.06.2002
會議完結日21.06.2002
會議地點STRASBOURG
期刊名稱Thin Solid Films
出版年份2003
月份3
日期3
卷號427
期次1-2
出版社ELSEVIER SCIENCE SA
頁次417 - 421
國際標準期刊號0040-6090
語言英式英語
關鍵詞cavities; field emission devices; ion beam synthesis; rapid thermal annealing; Si; SiC; WC; WSi2
Web of Science 學科類別Materials Science; Materials Science, Coatings & Films; MATERIALS SCIENCE, COATINGS & FILMS; Materials Science, Multidisciplinary; MATERIALS SCIENCE, MULTIDISCIPLINARY; Physics; Physics, Applied; PHYSICS, APPLIED; Physics, Condensed Matter; PHYSICS, CONDENSED MATTER

上次更新時間 2021-17-01 於 00:03