Structural and optical properties of wurtzite MgxZn1-xS (0 <= x <= 0.25) films grown on (0001) Al2O3 by pulsed-laser deposition
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AbstractWurtzite MgxZn1-xS (0less than or equal toxless than or equal to0.25) thin films have been epitaxially grown on (0001) Al2O3 using pulsed-laser deposition. High-quality films can be prepared at a growth temperature of 450-550 degreesC with (0001) omega-rocking curve full width at half maximum as narrow as 0.09degrees. High-resolution cross-sectional transmission electron microscopy of the films deposited at 500 degreesC shows the presence of the mixture of zinc-blende and wurtzite phases at the interface, and therefore the interfacial region is highly defective. However, above the critical thickness of similar to5 nm, the film bulk consists of pure wurtzite material with a very high level of crystallinity. The band edge of MgxZn1-xS films examined by transmission spectroscopy at room temperature increases from 3.75 eV at x=0 to 3.95 at x=0.25. (C) 2002 American Institute of Physics.
All Author(s) ListOng HC, Dai JY
Journal nameApplied Physics Letters
Year2002
Month8
Day19
Volume Number81
Issue Number8
PublisherAMER INST PHYSICS
Pages1444 - 1446
ISSN0003-6951
eISSN1077-3118
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesPhysics; Physics, Applied; PHYSICS, APPLIED

Last updated on 2022-15-01 at 00:49