Aggregation and out diffusion of iron atoms for Fe ion implanted silica films
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AbstractIron ions were implanted into a thermally grown silica film with a dose of about 6.5x10(16) Fe/cm(2) by using a metal vapor vacuum arc ion source at an accelerating voltage of 62 kV. The structure evolution of the film during the postimplantation annealing processes was studied by x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy experiments. It was found that the implanted iron atoms diffused out of the film and aggregated with the formation of particle islands on the film surface gradually after annealing. The out diffusion and island formation phenomena are particularly evident when the annealing temperature was elevated up to 800 degrees C. It was also demonstrated that in the early stage of annealing the growth of iron islands closely depended on the out diffusion of the implanted iron atoms, and both the size and areal density of the islands increased progressively with increasing annealing time. After a certain annealing period, the size of the islands continued to increase, but the areal density of the islands decreased significantly, which implied that most of the implanted iron atoms had diffused out of the film, and the islands could grow further by consuming the initially formed smaller ones through a surface diffusion process. (C) 1999 American Institute of Physics. [S0021-8979(99)05117-8].
All Author(s) ListDing XZ, Chiah MF, Cheung WY, Wong SP, Xu JB, Wilson IH, Wang HM, Chen LZ, Liu XH
Journal nameJournal of Applied Physics
Volume Number86
Issue Number5
Pages2550 - 2554
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesPhysics; Physics, Applied; PHYSICS, APPLIED

Last updated on 2021-18-09 at 00:40