Room temperature visible electroluminescence in silicon nanostructures
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AbstractNanometer silicon crystallites were fabricated by annealing a-Si:H/a-SiNx:H multiquantum well (MQW) structures with an excimer laser. The films were prepared by rf plasma enhanced chemical vapor deposition. Visible electroluminescence (EL) has been observed at room temperature from the crystallized samples that had Si well layers narrower than 4.0 nm. The EL spectra showed multiple peaks at wavelengths around 600 and 700 nm, and an orange-red colored light emission could be observed by the naked eye. The onset voltage of visible light emission was 7 V. The EL intensity increased dramatically with an increasing laser irradiation value, and the EL peak shifted towards shorter wavelengths with a decrease in the Si well layer thickness. Tn agreement with the theoretical model, the visible EL phenomenon can be interpreted as the result of carrier injection into the nanosized Si crystallites in the MQWs, and radiation recombination via silicon quantum well states. (C) 1999 American Vacuum Society. [S0734-2101(99)04501-7].
All Author(s) ListWu W, Huang XF, Chen KJ, Xu JB, Gao X, Xu J, Li W
Name of Conference44th National Symposium of the American-Vacuum-Society
Start Date of Conference20/10/1997
End Date of Conference24/10/1997
Place of ConferenceSAN JOSE
Journal nameJournal of Vacuum Science and Technology A
Year1999
Month1
Day1
Volume Number17
Issue Number1
PublisherAMER INST PHYSICS
Pages159 - 163
ISSN0734-2101
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesMaterials Science; Materials Science, Coatings & Films; MATERIALS SCIENCE, COATINGS & FILMS; Physics; Physics, Applied; PHYSICS, APPLIED

Last updated on 2020-24-11 at 01:16