Charge-transport properties of dendritic germanium thin films
Publication in refereed journal

香港中文大學研究人員

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摘要The charge transport properties of dendritic Ge thin films on glass substrates before and after postannealing have been studied by the methods of temperature-dependent electrical conductivity measurements and temperature-dependent Hall mobility measurements. Results showed that the dendritic structure is consistent with a crystalline matrix consisting of a high density of structural defects that cause degenerate conduction at high temperatures. Postannealing of the as-prepared samples at a temperature greater than or equal to 570 degrees C for 2 h succeeded in converting the degenerate conduction into a nondegenerate one. All the samples were found to be p-type in the low-temperature regime (20-100 K). The origin of the acceptorlike states within the forbidden gap was suggested to arise from dangling-bond-related defects, which could be partially removed by the prolonged annealing. Hall mobility (mu(H)) data in the temperature range from 20 to 300 K revealed that the charge carriers were subjected to two kinds of scattering mechanisms. At low temperatures, ionized center scattering was found to dominate and mu(H) showed a T-alpha dependence, where alpha is a positive constant; while at higher temperatures mu(H) was found to vary as T-0.5 rather than the expected T-3/2 dependence. This was explained in terms of a structural-imperfection-limited mean free path of the charge carriers. [S0163-1829(98)06648-X].
著者Lui KM, Wong WH, Chik KP
期刊名稱Physical review B: Condensed matter and materials physics
出版年份1998
月份12
日期15
卷號58
期次24
出版社AMER PHYSICAL SOC
頁次16110 - 16117
國際標準期刊號1098-0121
電子國際標準期刊號1550-235X
語言英式英語
Web of Science 學科類別Physics; Physics, Condensed Matter; PHYSICS, CONDENSED MATTER

上次更新時間 2020-11-07 於 01:50