Solution-processed PCDTBT capped low-voltage InGaZnOx thin film phototransistors for visible-light detection
Publication in refereed journal

香港中文大學研究人員

引用次數
替代計量分析
.

其它資訊
摘要The effects of visible-light detection based on solution processed poly[N-9 ''-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'benzothiadiazole) (PCDTBT) capped InGaZnOx (IGZO) phototransistors with Al2Ox serving as gate dielectric are investigated in this paper. The high-k dielectric is used to lower the device operating voltage down to 2V. Photons emitted from laser sources with the wavelengths (lambda) of 532 nm and 635 nm are absorbed through the layer of PCDTBT to generate electron-hole-pairs (EHPs). After the separation of EHPs, electrons are injected into IGZO layer through the p-n junction formed between the IGZO (n-type semiconductor) and the PCDTBT (p-type semiconductor). The photo-generated carriers boost the drain current of the transistors as well as bring about the negative threshold voltage shift. Significant enhanced detection performance is achieved under the laser wavelength of 532 nm. The highest photoresponsivity reaches up to 20 A/W, while the photoresponse rise time comes to 10 ms and the fall time comes to approximate 76 ms, which is much faster than trap assisted IGZO visible light detection. The fabricated phototransistors favor the application of visible-light detectors and/or optical switches. (C) 2015 AIP Publishing LLC.
著者Wang H, Xiao YB, Chen ZF, Xu WY, Long MZ, Xu JB
期刊名稱Applied Physics Letters
出版年份2015
月份6
日期15
卷號106
期次24
出版社AMER INST PHYSICS
國際標準期刊號0003-6951
電子國際標準期刊號1077-3118
語言英式英語
Web of Science 學科類別Physics; Physics, Applied

上次更新時間 2021-20-01 於 01:26