Graphene photodetector integrated on silicon nitride waveguide
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摘要We demonstrated a graphene photodetector integrated on silicon nitride waveguide. The photodetector worked in the photoconductor mode. The detection mechanisms of the device were based on photo-thermoelectric effect and bolometric effect. The waveguide absorption (0.025 dB/mu m) with a chemical vapor deposition grown monolayer graphene on top was studied experimentally. The measurement agreed well with the simulation result. The Fermi level of the top layer graphene in the photodetector was analyzed by using the field-effect transport measurement. A maximum internal responsivity of 126 mA/W with dynamic response of 1 K Hz was achieved in the telecommunication band. The unique combination of graphene and silicon nitride integrated circuit can potentially lead to unprecedented nonlinear and optoelectronic applications. (c) 2015 AIP Publishing LLC.
著者Wang JQ, Cheng ZZ, Chen ZF, Xu JB, Tsang HK, Shu C
期刊名稱Journal of Applied Physics
出版年份2015
月份4
日期14
卷號117
期次14
出版社AMER INST PHYSICS
國際標準期刊號0021-8979
電子國際標準期刊號1089-7550
語言英式英語
Web of Science 學科類別Physics; Physics, Applied

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