Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors
Publication in refereed journal

香港中文大學研究人員

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摘要We developed a facile and environmentally friendly solution-processed method for aluminum oxide (AIO(x)) dielectrics. The formation and properties of AlOx thin films under various annealing temperatures were intensively investigated by thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), spectroscopic ellipsometry, atomic force microscopy (AFM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), impedance spectroscopy, and leakage current measurements. The sol-gelderived AlOx thin film undergoes the decomposition of organic residuals ana nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide, as the annealing temperature increases. Finally, the AlOx film is used as gate dielectric for a variety of low-temperature solution-processed oxide TFTs. Above all, the In2O3 and InZnO TFTs exhibited high average mobilities of 57.2 cm(2) s(-1) and 10.1 cm(2) V-1 s(-1), as well as an on/off current ratio of similar to 10(5) and low operating voltages of 4 V at a maximum processing temperature of 300 degrees C. Therefore, the solution-processable AlOx could be a promising candidate dielectric for low-cost, low-temperature, and high-performance oxide electronics.
著者Xu WY, Wang H, Xie FY, Chen J, Cao HT, Xu JB
期刊名稱ACS Applied Materials and Interfaces
出版年份2015
月份3
日期18
卷號7
期次10
出版社AMER CHEMICAL SOC
頁次5803 - 5810
國際標準期刊號1944-8244
電子國際標準期刊號1944-8252
語言英式英語
關鍵詞aluminum oxide; environmentally friendly; high-peiformance; low-temperature; oxide thin-film transistors; solution process
Web of Science 學科類別Materials Science; Materials Science, Multidisciplinary; Nanoscience & Nanotechnology; Science & Technology - Other Topics

上次更新時間 2021-19-01 於 23:16