Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors
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AbstractWe developed a facile and environmentally friendly solution-processed method for aluminum oxide (AIO(x)) dielectrics. The formation and properties of AlOx thin films under various annealing temperatures were intensively investigated by thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), spectroscopic ellipsometry, atomic force microscopy (AFM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), impedance spectroscopy, and leakage current measurements. The sol-gelderived AlOx thin film undergoes the decomposition of organic residuals ana nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide, as the annealing temperature increases. Finally, the AlOx film is used as gate dielectric for a variety of low-temperature solution-processed oxide TFTs. Above all, the In2O3 and InZnO TFTs exhibited high average mobilities of 57.2 cm(2) s(-1) and 10.1 cm(2) V-1 s(-1), as well as an on/off current ratio of similar to 10(5) and low operating voltages of 4 V at a maximum processing temperature of 300 degrees C. Therefore, the solution-processable AlOx could be a promising candidate dielectric for low-cost, low-temperature, and high-performance oxide electronics.
All Author(s) ListXu WY, Wang H, Xie FY, Chen J, Cao HT, Xu JB
Journal nameACS Applied Materials and Interfaces
Volume Number7
Issue Number10
Pages5803 - 5810
LanguagesEnglish-United Kingdom
Keywordsaluminum oxide; environmentally friendly; high-peiformance; low-temperature; oxide thin-film transistors; solution process
Web of Science Subject CategoriesMaterials Science; Materials Science, Multidisciplinary; Nanoscience & Nanotechnology; Science & Technology - Other Topics

Last updated on 2020-27-11 at 01:52