Optimizing the growth of vanadyl-phthalocyanine thin films for high-mobility organic thin-film transistors
Publication in refereed journal


引用次數
替代計量分析
.

其它資訊
摘要To achieve high-mobility organic thin-film transistors (OTFTs), growth of vacuum-evaporated vanadyl-phthalocyanine (VOPc) thin films as the active layer was studied and optimized by varying the process conditions of the substrate temperature, deposition rate, and dielectric type. On the popularly used SiO(2) gate dielectric, the surface morphology of the VOPc thin film exhibited closely packed terraced grains when the substrate temperature and deposition rate were carefully controlled. The VOPc OTFTs with terraced grains on SiO(2) showed a high mobility of 0.04-0.06 cm(2)/V s. Terraced VOPc grains were also obtained on Ta(2)O(5) and Al(2)O(3)/SiO(2) gate dielectrics, where larger and more regular grains were formed. As a result, a higher mobility of 0.05-0.10 cm(2)/V s was obtained for the VOPc OTFT with Ta(2)O(5), and 0.06-0.14 cm(2)/V s for the VOPc OTFT with Al(2)O(3)/SiO(2). The high mobility along with the merits of good stability and low cost makes VOPc a promising candidate for applications in organic electronics.
著者Yu XJ, Xu JB, Cheung WY, Ke N
期刊名稱Journal of Applied Physics
出版年份2007
月份11
日期15
卷號102
期次10
出版社AMER INST PHYSICS
國際標準期刊號0021-8979
電子國際標準期刊號1089-7550
語言英式英語
Web of Science 學科類別Physics; Physics, Applied; PHYSICS, APPLIED

上次更新時間 2020-23-11 於 23:52