Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate
Publication in refereed journal


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摘要Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.
著者Gao J, Xu JB, Zhu M, Ke N, Ma D
期刊名稱Journal of Physics D: Applied Physics
出版年份2007
月份9
日期21
卷號40
期次18
出版社IOP PUBLISHING LTD
頁次5666 - 5669
國際標準期刊號0022-3727
電子國際標準期刊號1361-6463
語言英式英語
Web of Science 學科類別Physics; Physics, Applied; PHYSICS, APPLIED

上次更新時間 2020-30-11 於 23:20