Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation
Refereed conference paper presented and published in conference proceedings


全文

引用次數

其它資訊
摘要We have prepared FeSi2 precipitates of nanometer size in Si by ion implantation using a metal vapor vacuum arc (MEVVA) ion source and studied their photoluminescence properties. Broad photoluminescence (PL) spectra at around 1550 nm were observed for all samples attributed to emission from the FeSi2 precipitates. It was found that all the PL spectra can be decomposed into two peaks, a main peak at near 1530 nm and a satellite peak at 1607 nm. Samples with a furnace annealing (FA) step at a lower temperature of 850 degrees C are found to have a main peak position at a longer wavelength close to 1540 nm. For samples with a FA step at higher temperatures, the main peak position shifts to shorter wavelengths of near 1525 nm. In addition, we have also prepared MOS structures with implanted FeSi2 precipitates incorporated in the structures and measured their EL proper-ties. The EL proper-ties from these FeSi2-Si MOS structures after various thermal treatments were measured as a function of temperature from 80 to 300 K. Our preliminary results show that clear EL signals are obtained even at room temperature under appropriate processing conditions.
著者Chow CF, Gao Y, Wong SP, Ke N, Li Q, Cheung WY, Shao G, Lourenco MA, Homewood KP
會議名稱Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting
會議開始日28.03.2005
會議完結日01.04.2005
會議地點San Francisco
會議國家/地區美國
詳細描述(Mat. Res. Soc. Symp. Proc. Vol. 862, Warrendale, PA 2005),
出版年份2005
月份1
日期1
卷號862
出版社MATERIALS RESEARCH SOCIETY
頁次507 - 512
國際標準書號1-55899-815-2
國際標準期刊號0272-9172
語言英式英語
Web of Science 學科類別Crystallography; Instruments & Instrumentation; Materials Science; Materials Science, Characterization & Testing; Materials Science, Multidisciplinary

上次更新時間 2020-24-11 於 00:48