The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si
Publication in refereed journal


引用次數
替代計量分析
.

其它資訊
摘要Nanometer-sized beta-FeSi2 precipitates are formed in Si by ion beam synthesis (IBS). A systematic study is carried out to investigate the correlation among the implantation parameters, the microstructure, and the luminescence properties. On the one hand, we found additional orientation relationships (ORs) appear between the beta-FeSi2 and the Si with improved lattice coherence between the two, when the ion implantation energy is increased. On the other hand, the degree of preferential orientation deteriorates and leads to poor lattice coherence between the particles and Si matrix when the iron ion is overdosed. These microstructure changes lead to different luminescence properties (intensity, peak position and shape) of the beta-FeSi2 particles accordingly. (c) 2005 Elsevier B.V. All rights reserved.
著者Chong YT, Li Q, Chow CF, Ke N, Cheung WY, Wong SP, Homewood KP
會議名稱Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting
會議開始日31.05.2005
會議完結日03.06.2005
會議地點Strasbourg
期刊名稱Materials Science and Engineering: B
出版年份2005
月份12
日期5
卷號124
出版社ELSEVIER SCIENCE SA
頁次444 - 448
國際標準期刊號0921-5107
語言英式英語
關鍵詞ion beam synthesis; ion implantation energy; semiconducting beta-FeSi2
Web of Science 學科類別Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Condensed Matter

上次更新時間 2020-30-11 於 00:11