Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
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AbstractSilicon MOS structures with FeSi2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi2-Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi2 and the other attributed to Si band edge emission. While the intensity of the FeSi2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed. (c) 2005 Elsevier B.V. All rights reserved.
All Author(s) ListChow CF, Wong SP, Gao Y, Ke N, Li Q, Cheung WY, Lourenco MA, Homewood KP
Name of ConferenceSymposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting
Start Date of Conference31/05/2005
End Date of Conference03/06/2005
Place of ConferenceStrasbourg
Journal nameMaterials Science and Engineering: B
Year2005
Month12
Day5
Volume Number124
PublisherELSEVIER SCIENCE SA
Pages440 - 443
ISSN0921-5107
LanguagesEnglish-United Kingdom
Keywordselectroluminescence; FeSi2; Si MOS structure
Web of Science Subject CategoriesMaterials Science; Materials Science, Multidisciplinary; Physics; Physics, Condensed Matter

Last updated on 2021-14-01 at 00:32