Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
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摘要Silicon MOS structures with FeSi2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi2-Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi2 and the other attributed to Si band edge emission. While the intensity of the FeSi2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed. (c) 2005 Elsevier B.V. All rights reserved.
著者Chow CF, Wong SP, Gao Y, Ke N, Li Q, Cheung WY, Lourenco MA, Homewood KP
會議名稱Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting
會議開始日31.05.2005
會議完結日03.06.2005
會議地點Strasbourg
期刊名稱Materials Science and Engineering: B
出版年份2005
月份12
日期5
卷號124
出版社ELSEVIER SCIENCE SA
頁次440 - 443
國際標準期刊號0921-5107
語言英式英語
關鍵詞electroluminescence; FeSi2; Si MOS structure
Web of Science 學科類別Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Condensed Matter

上次更新時間 2020-20-11 於 01:44