Photoelectric effect and transport properties of a single CdS nanoribbon
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摘要A single US nano ribbon-based photoelectric detector was fabricated by the shadow mask technique and conventional lithography. Atomic force microscopy (AFM) and micro-Raman techniques were applied to acquire the morphology and structure of a single US nanoribbon. Transmission electron microscopy reveals a single crystalline interior with a few local defects. From the current-voltage (I-V) measurements, it is found that the maximum current reached 15 mu A, and the photoconductivity variation could be as high as 25,000, as well as the corresponding current density is estimated to be about 7.0 x 10(5) A/cm(2). Besides the ohmic characteristic of the I-V curve by photoelectric effect, the nonlinear I-V curve owing to the Schottky contact is also found. The transient photocurrent response indicates the slow process by carrier trapping. (c) 2005 Elsevier B.V. All rights reserved.
著者Chen J, Xue K, An J, Tsang SW, Ke N, Xu JB, Li Q, Wang CR
會議名稱6th International Conference on Scanning Probe Microscopy, Sensors and Nanostructures
會議開始日24.05.2004
會議完結日26.05.2004
會議地點Beijing
期刊名稱Ultramicroscopy
出版年份2005
月份11
日期1
卷號105
期次1-4
出版社ELSEVIER SCIENCE BV
頁次275 - 280
國際標準期刊號0304-3991
語言英式英語
關鍵詞CdS nanoribbon; excitation; photoelectric effect; strain; surface
Web of Science 學科類別Microscopy; MICROSCOPY

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