Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy
Publication in refereed journal

香港中文大學研究人員

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摘要The interfacial structures of HfO(2) and HfAlO thin films on Si have been investigated using spatially resolved electron energy-loss spectroscopy. We have found that interfaces are not atomically sharp, and variation in the symmetry of the local atomic coordination lasts for a couple of monolayers; for both the as-deposited HfO(2) and the HfAlO samples. Annealing of the HfO(2) film in the oxygen environment leads to the formation of a thick SiO(2)/SiO. stack layer in-between the original HfO(2) and the Si substrate. As a comparison, the interfacial stability is significantly improved by Al incorporation into the HfO(2) film (forming HfAlO), which effectively reduced/eliminated the interfacial silicon oxide formation during the oxygen annealing process. The mechanism of the high-k film/substrate stabilization by Al incorporation is discussed based on the experimental results. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
著者Wang XF, Li Q, Lee PF, Dai JY, Gong XG
期刊名稱Micron
出版年份2010
月份1
日期1
卷號41
期次1
出版社PERGAMON-ELSEVIER SCIENCE LTD
頁次15 - 19
國際標準期刊號0968-4328
語言英式英語
關鍵詞Electron energy-loss spectroscopy; HfAlO; HfO(2); High-k dielectric; Interface
Web of Science 學科類別Microscopy; MICROSCOPY

上次更新時間 2021-25-02 於 00:47