Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of beta-FeSi2 precipitates in Si
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摘要Completely amorphous Fe-Si layers are formed by Fe implantation into Si substrate at a dosage of 5 x 10(15) cm(-2) using a metal vapor vacuum arc (MEVVA) ion source under 80 kV extraction voltage and cryogenic temperature. After thermal annealing, beta-FeSi2 precipitates are formed in Si matrix. The influence of impurities in these amorphous Fe-Si layers on the photoluminescence (PL) from beta-FeSi2 precipitates is investigated. PL is found to be significantly enhanced by optimizing the impurity concentration and annealing scheme. After 60s of rapid thermal annealing (RTA) at 900 degrees C, beta-FeSi2 precipitates in medium boron-doped Si substrate give the strongest PL intensity without boron outdiffusion from them. (C) 2008 Elsevier B.V. All rights reserved.
著者Sun CM, Tsang HK, Wong SP, Ke N, Hark SK
期刊名稱Journal of Luminescence
出版年份2008
月份11
日期1
卷號128
期次11
出版社Elsevier
頁次1841 - 1845
國際標準期刊號0022-2313
語言英式英語
關鍵詞beta-FeSi2 precipitates; ion beam synthesis; photoluminescence; solid-phase crystallization
Web of Science 學科類別Optics; OPTICS

上次更新時間 2020-20-11 於 23:55