Rapid thermal annealing of ion beam synthesized beta-FeSi(2) nanoparticles in Si
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摘要High crystal-quality beta-FeSi(2) nanoparticles in silicon, prepared by ion beam synthesis and subjected to rapid thermal annealing (RTA), are investigated. Completely amorphous Fe-Si layers are formed by Fe implantation at cryogenic temperature, with a dosage of 5x10(15) cm(-2), into float-zone silicon. After RTA at 900 degrees C for 60 s, beta-FeSi(2) precipitates are aggregated in the Si matrix and give similar to 1.5 mu m photoluminescence. High-resolution plan-view transmission electron microscopy revealed that some strain is present in the RTA treated FeSi(2) particles. Silicon dislocations, coming from the strain relaxation during the additional long-term annealing, are observed around beta-FeSi(2) particles. (C) 2008 American Institute of Physics.
著者Sun CM, Tsang HK, Wong SP, Cheung WY, Ke N, Hark SK
期刊名稱Applied Physics Letters
出版年份2008
月份5
日期26
卷號92
期次21
出版社AIP Publishing
國際標準期刊號0003-6951
電子國際標準期刊號1077-3118
語言英式英語
Web of Science 學科類別Physics; Physics, Applied; PHYSICS, APPLIED

上次更新時間 2020-26-11 於 00:48