Surface morphology evolution of amorphous Fe-Si layers upon thermal annealing
Publication in refereed journal


摘要Changes in the surface morphology of ion-beam-synthesized amorphous Fe-Si layers after rapid thermal annealing (RTA) and furnace annealing (FA) were investigated using atomic force microscopy and transmission electron microscopy. Completely amorphous Fe-Si layers were formed by Fe implantation at a dosage of 5 x 10(15) cm(-2) using a metal vapour vacuum arc ion source under 80 kV extraction voltage and cryogenic temperature. After RTA at 850 degrees C, beta-FeSi(2) precipitates in Si are completely aggregated from this amorphous Fe-Si layer and the surface of the implanted layer remains flat. To date, no obvious photoluminescence (PL) spectrum has been reported from RTA treated beta-FeSi2 precipitates. However, after annealing at 850 degrees C for 40 s, high-quality beta-FeSi(2) precipitates in Si are obtained which clearly show 1.5 mu m PL at 80 K for the first time. Even though additional long-term FA at 850 degrees C can enhance PL intensity to a limited extent, the longer thermal treatment induces the outdiffusion of beta-FeSi(2) precipitates and degrades the surface flatness.
著者Sun CM, Tsang HK, Wong SP, Ke N, Hark SK
期刊名稱Journal of Physics D: Applied Physics
出版社IOP Publishing: Hybrid Open Access
Web of Science 學科類別Physics; Physics, Applied; PHYSICS, APPLIED

上次更新時間 2020-25-11 於 00:23